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| Final data SPD04N50C3 VDS @ Tjmax RDS(on) ID 560 0.95 4.5 V A Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO252-3-1 Type SPD04N50C3 Package P-TO252-3-1 Ordering Code Q67040-S4574 Marking 04N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg 4.5 20 30 50 -55... +150 W C A V 0.4 I D puls EAS Symbol ID 4.5 2.8 13.5 130 mJ Value Unit A Page 1 2003-10-07 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, I D = 4.5 A, Tj = 125 C SPD04N50C3 Symbol dv/dt Value tbd Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=4.5A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=200, VGS=VDS V DS=500V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA RthJA Tsold - Values typ. 35 max. 2.5 62 62 260 Unit K/W C Values typ. 600 3 0.1 0.85 2.3 1.4 max. 3.9 500 2.1 - Unit V A 1 100 100 0.95 nA Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=2.8A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-10-07 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=400V, ID=4.5A, V GS=0 to 10V V DD=400V, ID=4.5A SPD04N50C3 Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=2.8A V GS=0V, V DS=25V, f=1MHz Values typ. 4.4 470 160 15 27 44 10 5 70 10 max. - Unit S pF Effective output capacitance, 3) Co(er) V GS=0V, V DS=0V to 400V pF td(on) tr td(off) tf V DD=350V, V GS=0/10V, ID=4.5A, RG=18 - ns - 2.2 10 22 5 - nC V(plateau) V DD=400V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-10-07 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.074 0.132 0.555 0.529 0.169 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. VSD t rr Q rr I rrm di rr/dt VGS =0V, I F=IS VR =400V, IF=IS , diF/dt=100A/s SPD04N50C3 Symbol IS I SM Conditions min. TC=25C Values typ. 1 280 2.3 16 860 max. 4.5 13.5 1.2 - Unit A V ns C A A/s Unit 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-10-07 Final data 1 Power dissipation Ptot = f (TC) 55 SPD04N50C3 SPD04N50C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W 45 40 A 10 1 Ptot 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID 10 0 35 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 16 K/W A 10 0 12 20V 10V 7V 6.5V ZthJC ID 10 6V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 8 5.5V 6 4 5V 4.5V 4V 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V VDS 25 Page 5 2003-10-07 Final data 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 9 SPD04N50C3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 10 A 7 6 20V 8V 7V 6.5V 6V 4V 8 4.5V RDS(on) 7 5V 20V 8V 7V 6.5V 6V ID 5.5V 5 4 5V 6 5 5.5V 3 2 1 0 0 4.5V 4 3 2 1 0 4V 5 10 15 V VDS 25 1 2 3 4 5 6 7 A ID 9 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPD04N50C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 16 4.5 A 25C RDS(on) 4 12 ID 3.5 3 10 150C 8 2.5 2 1.5 98% 1 0.5 0 -60 -20 20 60 100 C 6 4 typ 2 180 0 0 1 2 3 4 5 6 7 8 V VGS 10 Tj Page 6 2003-10-07 Final data 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 4.5 A pulsed 16 V SPD04N50C3 SPD04N50C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPD04N50C3 A 12 VGS 0.8 VDS max 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) nC 10 0.2 VDS max 10 1 4 2 10 -1 0 0 0 4 8 12 16 20 24 32 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 5 12 Avalanche energy EAS = f (Tj) par.: ID = 3.4 A, V DD = 50 V 160 A 4 3.5 mJ Tj(START) =25C 120 EAS Tj(START) =125C -2 -1 0 1 2 4 IAR 3 2.5 2 1.5 100 80 60 40 1 0.5 0 -3 10 20 10 10 10 10 10 s 10 tAR 0 20 40 60 80 100 120 C 160 Tj Page 7 2003-10-07 Final data 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPD04N50C3 SPD04N50C3 14 Avalanche power losses PAR = f (f ) parameter: E AR=0.4mJ 200 V W V(BR)DSS 570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 25 50 150 PAR 125 100 75 C 180 04 10 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 3.5 pF J 10 3 Ciss 2.5 10 2 Coss C Eoss 2 1.5 Crss 10 1 1 10 0 0.5 10 -1 0 100 200 300 V 500 0 0 100 200 300 V 500 VDS VDS Page 8 2003-10-07 Final data SPD04N50C3 Definition of diodes switching characteristics Page 9 2003-10-07 Final data P-TO-252-3-1 (D-PAK) SPD04N50C3 Page 10 2003-10-07 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD04N50C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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